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IGBT Laser Annealing System
Product Introduction
Featuring precise single/dual pulse control, this system performs rapid laser annealing on the backside of silicon-based IGBT wafers post-ion implantation. It achieves superior activation depth while effectively repairing lattice damage caused during implantation.
  • Product Features
  • Field of application
  • Technical indicators
Product Features

Activation depth ≥ 7 μm

Throughput > 25 wafers per hour @ 8-inch

Excellent sheet resistance uniformity and surface appearance

Full-process in-situ monitoring and feedback capability

Supports ultra-thin wafers, TAIKO wafers, and warped wafers

Equipped with laser-assisted heating system


Field of application
Activation annealing following ion implantation in discrete device manufacturing processes
Technical indicators
Specification DR-S-LA200S DR-S-LA300S DR-S-LA200D DR-S-LA300D
Compatible Wafer Sizes 6"/8" compatible 8"/12" compatible 6"/8" compatible 8"/12" compatible
Laser Energy Density ≥ 5 J/cm² ≥ 5 J/cm² ≥ 5 J/cm² ≥ 5 J/cm²
Laser Stability ≤ 2%, RMS
Activation Rate ≥ 95% @B Implant, ≥ 90% @P Implant
Uniformity Intra-wafer: ≤ 1%, Inter-wafer: ≤ 1% @ 8", RS
Cleanliness Control ≤ 30 @ 0.5 μm, ≤ 5 @ 1 μm
Automation System Dual wafer loading ports, multi-axis robotic arm, pre-alignment unit
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